DataSheet.es    


Datasheet STHS2376A Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1STHS2376AIEEE 802.3af PoE Powered Device (PD) interface controller

STHS2375A, STHS2375L, STHS2376A, STHS2376L, STHS2377A, STHS2377L IEEE 802.3af PoE Powered Device (PD) interface controller www.datasheet4u.com Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ IEEE 802.3af-compliant interface for Powered Devices (PDs) Integrated 100V, 500mA power MOSFET
STMicroelectronics
STMicroelectronics
controller


STH Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1STH1061NPN Plastic Power Transistor

ST H1061 NPN Plastic Power Transistor Low frequency power amplifier TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Te
SEMTECH ELECTRONICS
SEMTECH ELECTRONICS
transistor
2STH10NA50N-CHANNEL Power MOS MOSFET

STH10NA50/FI STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH10NA50 STH10NA50FI STW10NA50 s s s s s s s V DSS 500 V 500 V 500 V R DS( on) < 0.8 Ω < 0.8 Ω < 0.8 Ω ID 9.6 A 5.6 A 9.6 A TO-247 TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALAN
ST Microelectronics
ST Microelectronics
mosfet
3STH10NA50FIN-CHANNEL Power MOS MOSFET

STH10NA50/FI STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH10NA50 STH10NA50FI STW10NA50 s s s s s s s V DSS 500 V 500 V 500 V R DS( on) < 0.8 Ω < 0.8 Ω < 0.8 Ω ID 9.6 A 5.6 A 9.6 A TO-247 TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALAN
ST Microelectronics
ST Microelectronics
mosfet
4STH10NC60N-CHANNEL Power MOS MOSFET

N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET TYPE STW10NC60 STH10NC60FI s s s s s STW10NC60 STH10NC60FI VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 10 A 10 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BEN
ST Microelectronics
ST Microelectronics
mosfet
5STH10NC60FIN-CHANNEL Power MOS MOSFET

N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET TYPE STW10NC60 STH10NC60FI s s s s s STW10NC60 STH10NC60FI VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 10 A 10 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BEN
ST Microelectronics
ST Microelectronics
mosfet
6STH10NK60ZFIN-CHANNEL Power MOSFET

STP10NK60Z/FP, STB10NK60Z/-1 STH10NK60ZFI, STW10NK60Z N-CHANNEL600V-0.65 Ω-10ATO-220/FP/D 2PAK/I2PAK/TO-247/ISOWATT218 Zener-Protected SuperMESH™ Power MOSFET R DS(on) < 0.75 < 0.75 < 0.75 < 0.75 < 0.75 < 0.75 Ω Ω Ω Ω Ω Ω ID 10 10 10 10 10 10 A A A A A A Pw 115 W 115 W 35 W 115 W 35
STMicroelectronics
STMicroelectronics
mosfet
7STH12N120K5-2N-CHANNEL Power MOS MOSFET

STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data H 2PAK-2 TO-220 Features Order codes VDS RDS(on) max. ID PTOT STH12N120K5-2 STP12N120K5 1200 V STW12N
STMicroelectronics
STMicroelectronics
mosfet



Esta página es del resultado de búsqueda del STHS2376A. Si pulsa el resultado de búsqueda de STHS2376A se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap