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PDF AOT9606 Data sheet ( Hoja de datos )
| Número de pieza | AOT9606 | |
| Descripción | 8A N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AOT9606 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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www.datasheet4u.AcoOm T8N60 / AOTF8N60
600V, 8A N-Channel MOSFET
formerly engineering part number AOT9606/AOTF9606
General Description
The AOT8N60 & AOTF8N60 have been fabricated
using an advanced high voltage MOSFET process
that is designed to deliver high levels of performance
and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
VDS (V) = 700V @ 150°C
ID = 8A
RDS(ON) < 0.9 Ω (VGS = 10V)
100% UIS Tested!
100% R g Tested!
C iss , C oss , C rss Tested!
TO-220
Top View
TO-220F
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT8N60 AOTF8N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current B
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
8
5
32
3.2
150
300
5
8*
5*
TC=25°C
Power Dissipation B Derate above 25oC
PD
147 50
1.17 0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
-50 to 150
300
Thermal Characteristics
Parameter
Symbol
AOT8N60 AOTF8N60
Maximum Junction-to-Ambient A
RθJA
65
65
Maximum Case-to-Sink A
RθCS
0.5
-
Maximum Junction-to-Case D,F
RθJC
* Drain current limited by maximum junction temperature.
0.85
2.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
1 page  
AOT8N60/AOTF8N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=0.45°C/W
www.datasheet4u1.com
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT8N60 (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=2.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF8N60 (Note F)
100
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOT9606.PDF ] | |
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