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PDF Si7145DP Data sheet ( Hoja de datos )

Número de pieza Si7145DP
Descripción P-Channel 30-V (D-S) MOSFET
Fabricantes Vishay Intertechnology 
Logotipo Vishay Intertechnology Logotipo



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New Product
P-Channel 30-V (D-S) MOSFET
Si7145DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0026 at VGS = - 10 V
- 30
0.00375 at VGS = - 4.5 V
ID (A)
- 60d
- 60d
PowerPAK SO-8
Qg (Typ.)
129 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
6.15 mm
S
1S
5.15 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information: Si7145DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Adaptor Switch
- Notebook Computers
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)e, f
Limit
- 30
± 20
- 60d
- 60d
- 36.5a, b
- 29.2a, b
- 100
- 60d
- 5.6a, b
- 50
125
104
66.6
6.25a, b
4.0a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Case
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
15
0.9
Maximum
20
1.2
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 54 °C/W.
d. Package limited.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 64814
S09-0872-Rev. A, 18-May-09
www.vishay.com
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Si7145DP pdf
New Product
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MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
180
Si7145DP
Vishay Siliconix
144
108
72 Package Limited
36
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
125 3.0
100 2.4
75 1.8
50 1.2
25 0.6
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64814
S09-0872-Rev. A, 18-May-09
www.vishay.com
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