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PDF SIR414DP Data sheet ( Hoja de datos )
| Número de pieza | SIR414DP | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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New Product
N-Channel 40-V (D-S) MOSFET
SiR414DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
40 0.0028 at VGS = 10 V
0.0032 at VGS = 4.5 V
ID (A)a
50
50
Qg (Typ.)
38 nC
PowerPAK® SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• Synchronous Rectification
• Secondary Side DC/DC
D
G
Bottom View
Ordering Information: SiR414DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
S
N-Channel MOSFET
Limit
40
± 20
50a
50a
33b, c
26b, c
70
50a
4.9b, c
40
80
83
53
5.4b, c
3.4b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
18
1.0
23
°C/W
1.5
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
www.Dadta.SS(nheoeeteptS4loaUltde.cedor)mPasroafileres(uwlwt wof.vtihsheasyi.ncogmul/apptigo?n64p7ro27c)e.sTshien
PowerPAK SO-8
manufacturing. A
is a leadless package. The
solder fillet at the exposed
end of
copper
the
tip
lead terminal is exposed copper
cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 64727
S09-0319-Rev. A, 02-Mar-09
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
150
SiR414DP
Vishay Siliconix
120
90
60 Package Limited
30
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
100 2.5
80 2.0
60 1.5
40 1.0
20 0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.DataSheet4U.com
Document Number: 64727
S09-0319-Rev. A, 02-Mar-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIR414DP.PDF ] | |
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