|
|
PDF SIR436DP Data sheet ( Hoja de datos )
| Número de pieza | SIR436DP | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SIR436DP (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
N-Channel 25-V (D-S) MOSFET
SiR436DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0046 at VGS = 10 V
25
0.0062 at VGS = 4.5 V
PowerPAK SO-8
ID (A)a
40
40
Qg (Typ.)
13 nC
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
Ordering Information: SiR436DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• Low-Side Switch
• Server, VRM
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1 mH
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Limit
25
± 20
40a
40a
25b, c
20b, c
80
40
80
40a
4.1b, c
50
32
5b, c
3.2b, c
- 55 to 150
260
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
20
2.0
Maximum
25
2.5
Unit
°C/W
Notes:
a. Based on TC = 25 °C. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
www.DataSchoepept4eUr .(cnoomt plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 69011
S-82666-Rev. A, 03-Nov-08
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
SiR436DP
Vishay Siliconix
80
60
Package Limited
40
20
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
60 2.5
48 2.0
36 1.5
24 1.0
12 0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.DataSheet4U.com
Document Number: 69011
S-82666-Rev. A, 03-Nov-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIR436DP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SIR436DP | N-Channel MOSFET | Vishay Siliconix |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |