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Número de pieza | SIR462DP | |
Descripción | N-Channel MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SIR462DP (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! N-Channel 30-V (D-S) MOSFET
SiR462DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0079 at VGS = 10 V
30
0.010 at VGS = 4.5 V
PowerPAK SO-8
ID (A)
30a
30a
Qg (Typ.)
8.8 nC
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: SiR462DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• High-Side Switch
• Server, VRM, POL
• DC/DC
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1 mH
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Limit
30
± 20
30a
30a
18.9b, c
15.1b, c
70
31
48
30a
4b, c
41.7
26.7
4.8b, c
3.1b, c
- 55 to 150
260
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
21
2.4
Maximum
26
3.0
Unit
°C/W
Notes:
a. Based on TC = 25 °C. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
www.DataSchoepept4eUr .(cnoomt plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 68823
S-82771-Rev. C, 17-Nov-08
www.vishay.com
1
1 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
75
SiR462DP
Vishay Siliconix
60
45
Package Limited
30
15
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
50 2.20
40 1.76
30 1.32
20 0.88
10 0.44
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.00
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.DataSheet4U.com
Document Number: 68823
S-82771-Rev. C, 17-Nov-08
www.vishay.com
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SIR462DP.PDF ] |
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