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Datasheet FDI040N06 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FDI040N06 | N-Channel MOSFET FDI040N06 N-Channel PowerTrench® MOSFET
June 2009
FDI040N06
N-Channel PowerTrench® MOSFET
60V, 168A, 4.0mΩ Features
• RDS(on) = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power |  Fairchild Semiconductor | mosfet |
FDI Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FDI025N06 | MOSFET, Transistor FDI025N06 N-Channel PowerTrench® MOSFET
June 2008
FDI025N06
N-Channel PowerTrench® MOSFET
60V, 265A, 2.5mΩ
tm
Features
• RDS(on) = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High po Fairchild Semiconductor mosfet | | |
| 2 | FDI030N06 | N-Channel MOSFET FDI030N06 N-Channel PowerTrench® MOSFET
June 2009
FDI030N06
N-Channel PowerTrench MOSFET
60V, 193A, 3.2mΩ Features
• RDS(on) = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Fairchild Semiconductor mosfet | | |
| 3 | FDI038AN06A0 | N-Channel PowerTrench MOSFET 60V/ 80A/ 3.8m FDP038AN06A0 / FDI038AN06A0
August 2002
FDP038AN06A0 / FDI038AN06A0
N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ
Features
• r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and R Fairchild Semiconductor mosfet | | |
| 4 | FDI040N06 | N-Channel MOSFET FDI040N06 N-Channel PowerTrench® MOSFET
June 2009
FDI040N06
N-Channel PowerTrench® MOSFET
60V, 168A, 4.0mΩ Features
• RDS(on) = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power Fairchild Semiconductor mosfet | | |
| 5 | FDI045N10A | N-Channel PowerTrench MOSFET FDP045N10A / FDI045N10A — N-Channel PowerTrench® MOSFET
FDP045N10A / FDI045N10A
N-Channel PowerTrench® MOSFET
100 V, 164 A, 4.5 mΩ
November 2013
Features
• RDS(on) = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Fast Switching Speed • Low Gate Charge, QG = 54 nC (Typ.) • High Performanc Fairchild Semiconductor mosfet | | |
| 6 | FDI047AN08A0 | N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
June 2004
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ
Features
• rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capa Fairchild Semiconductor mosfet | | |
| 7 | FDI047AN08A0 | N-Channel PowerTrench MOSFET FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
June 2004
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ
Features
• rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capa Fairchild Semiconductor mosfet | | |
| 8 | FDI100 | Diode, Rectifier American Microsemiconductor diode | | |
| 9 | FDI101 | Diode, Rectifier American Microsemiconductor diode | |
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