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Datasheet SPP47N10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SPP47N10 | SIPMOS Power-Transistor Preliminary data
SPI47N10 SPP47N10,SPB47N10
Feature
SIPMOS =Power-Transistor
Product Summary VDS RDS(on) ID
P-TO262-3-1 P-TO263-3-2
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
100 33 47
P-TO220-3-1
V m A
Type SPP47N10 SPB47N10 SPI47N10
P |  Infineon Technologies AG | transistor |
| 2 | SPP47N10L | SIPMOS Power-Transistor Preliminary data
SPI47N10L SPP47N10L,SPB47N10L
Feature
SIPMOS =Power-Transistor
Product Summary VDS RDS(on) ID
P-TO262-3-1 P-TO263-3-2
N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated
100 26 47
P-TO220-3-1
V m A
Type SPP47N10L SP | Infineon Technologies AG | transistor |
SPP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SPP-ID975 | Service Manual w
w
h Ver 1.0 1999. 11 S a t a D . w
SERVICE ee MANUAL
U 4 t
SPP-ID975/ID976
m o .c
US Model
SPP-ID975
Canadian Model
SPP-ID976
Photo: SPP-ID975
SPECIFICATIONS
General
Frequency band (SPP-ID975) 902 – 928 MHz Frequency band (SPP-ID976) 923.1 – 927.75 MHz Base phone : 18 µW Handset : 73  Sony data | | |
| 2 | SPP-ID975 | Cordless Telephone Sony data | | |
| 3 | SPP-ID976 | Service Manual w
w
h Ver 1.0 1999. 11 S a t a D . w
SERVICE ee MANUAL
U 4 t
SPP-ID975/ID976
m o .c
US Model
SPP-ID975
Canadian Model
SPP-ID976
Photo: SPP-ID975
SPECIFICATIONS
General
Frequency band (SPP-ID975) 902 – 928 MHz Frequency band (SPP-ID976) 923.1 – 927.75 MHz Base phone : 18 µW Handset : 73 Sony data | | |
| 4 | SPP02N60C3 | Cool MOS Power Transistor
Final data
SPP02N60C3 SPB02N60C3
VDS @ Tjmax RDS(on) ID
P-TO263-3-2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances
650 3 1.8  Infineon Technologies transistor | | |
| 5 | SPP02N60S5 | Cool MOS Power Transistor
SPP02N60S5 SPB02N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
P-TO220-3-1
VDS RDS(on) ID
Infineon Technologies transistor | | |
| 6 | SPP02N80C3 | Cool MOS Power Transistor
Final data
SPP02N80C3 SPA02N80C3
VDS RDS(on) ID
P-TO220-3-31
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 Infineon Technologies transistor | | |
| 7 | SPP03N60C3 | Cool MOS Power Transistor Final data
SPP03N60C3, SPB03N60C3 SPA03N60C3
VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved tr Infineon Technologies transistor | |
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