|
|
PDF 2SK3544 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3544 | |
| Descripción | Silicon N-Channel MOS Type Switching Regulator Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SK3544 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
2SK3544
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π-MOS V)
2SK3544
Switching Regulator Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.8 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V)
• Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
Drain–gate voltage (RGS = 20 kΩ)
Gate–source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
450
450
±30
13
52
100
350
13
4.5
150
−55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
www.DataSheet4U.coopmerating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and
Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Rth (ch-c)
1.25 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.46 mH, RG = 25 Ω, IAR = 13 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
4
3
1 2007-10-01
1 page  
2SK3544
rth – tw
10
1
Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
単発Single Pulse
0.01
10 μ
100 μ
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.25°C/W
1m
10 m
100 m
1
10
Pulse width tw (s)
Safe operating area
100
ID max (pulse) *
50
30
ID max
(continuous)
100 μs *
10 1 ms *
5
3
DC operation
1 Tc = 25°C
0.5
0.3
www.DataSheet4U.com
* Single nonrepetitive pulse
0.1 Tc = 25°C
Curves must be derated linearly
0.05 with increase in temperature.
VDSS max
0.03
3
10 30 100 300
Drain–source voltage VDS (V)
1000
EAS – Tch
400
300
200
100
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 90 V, L = 3.46 mH
Waveform
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2007-10-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK3544.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SK3541 | Small switching (30V/ 0.1A) |  ROHM Semiconductor |
| 2SK3541 | N-Channel MOSFET |  JCET |
| 2SK3541M3T5 | MOSFET ( Transistor ) |  WILLAS |
| 2SK3541PT | N-Channel Enhancement Mode Field Effect Transistor |  Chenmko Enterprise |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |