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PDF APTML10UM09R004T1AG Data sheet ( Hoja de datos )
| Número de pieza | APTML10UM09R004T1AG | |
| Descripción | Linear MOSFET Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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APTML10UM09R004T1AG
Linear MOSFET
Power Module
VDSS = 100V
RDSon = 09mΩ typ @ Tj = 25°C
ID = 154A* @ Tc = 25°C
Application
• Electronic load dedicated to power supplies and
battery discharge testing
Features
• Linear MOSFET
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
Benefits
Pins 1/2 ; 5/6 must be shorted together
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Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation n
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
• Direct mounting to heatsink (isolated package)
• easy series and parallels combinations for power and
voltage improvements
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
100
154*
115*
430
±30
10
480
100
50
3000
Unit
V
A
V
mΩ
W
A
mJ
* Output current must be limited to 67A @ TC=25°C and 47A @ TC=80°C to not exceed the shunt specification.
n In saturation mode
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–3
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet APTML10UM09R004T1AG.PDF ] | |
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