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PDF CMT35N03G Data sheet ( Hoja de datos )

Número de pieza CMT35N03G
Descripción 25V N-CHANNEL ENHANCEMENT-MODE MOSFET
Fabricantes Champion Microelectronic　
Logotipo Champion Microelectronic Logotipo



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No Preview Available ! CMT35N03G Hoja de datos, Descripción, Manual

CMT35N03G
25V N-CHANNEL ENHANCEMENT-MODE MOSFET
APPLICATION
‹ Vds=25V
‹ RDS(ON)=8.5 mΩ (Max.) , VGS @10V, Ids@30A
‹ RDS(ON)=13 mΩ (Max.), VGS @4.5V, Ids@30A
FEATURES
‹ Advanced trench process technology
‹ High Density Cell Design For Ultra Low On-Resistance
‹ Fully Characterized Avalanche Voltage and Current
PIN CONFIGURATION
TO-252
Front View
SYMBOL
D
G
12 3
S
N-Channel MOSFET
Maximum Ratings and Thermal Characteristics
(TA=25℃ unless otherwise notes)
Drain - Source Voltage
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Gate -Source Voltage
Continuous Drain Current
Pulsed Drain Current1)
Maximum Power Dissipation
Rating
Operating Junction and Storage Temperature Range
Junction – to –Case Thermal Resistance
Junction – to Ambient Thermal Resistance (PCB mount)2)
TA=25℃
TA=75℃
Symbol
Value
VDS 25
VGS ±20
ID 30
IDM 260
PD 60
PD 23
TJ / TSTG -55 to150
RθJC
1.8
RθJA
50
Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design ; not subject to production testing
Unit
V
V
A
A
W
W
℃
℃/W
℃/W
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 1

1 page




CMT35N03G pdf
CMT35N03G
25V N-CHANNEL ENHANCEMENT-MODE MOSFET
PACKAGE DIMENSION
B
R
www.DataSheet4U.com
4
1 23
TO-252
C
E
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
LD
G
J
H
2007/03/15 Rev1.0
Champion Microelectronic Corporation
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