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PDF AOP601 Data sheet ( Hoja de datos )
| Número de pieza | AOP601 | |
| Descripción | Complementary Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOP601
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP601 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications. A
Schottky diode in parallel with the n-channel FET
reduces body diode related losses. Standard
Product AOP601 is Pb-free (meets ROHS & Sony
259 specifications). AOP601L is a Green Product
ordering option. AOP601 and AOP601L are
electrically identical.
Features
n-channel
p-channel
VDS (V) = 30V
-30V
ID = 7.5A (VGS = 10V) -6.6A
RDS(ON)
< 28mΩ
< 35mΩ (VGS = -10V)
< 43mΩ
< 58mΩ (VGS = -4.5V)
Schottky
VDS=30V, IF=3A, VF<0.5V@1A
PDIP-8
S2 1
G2 2
8
7
D2
D2
P-ch
S1/A 3
G1 4
6
5
D1/K
D1/K
N-ch
D2 D1
K
G2 G1
A
S2 S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
7.5
6
30
Power Dissipation
TA=25°C
TA=70°C
PD
2.5
1.6
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-6.6
-5.3
-30
2.5
1.6
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward TA=25°C
Current A
TA=70°C
Pulsed Forward Current B
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
ID
IDM
PD
TJ, TSTG
Maximum Schottky
30
4
2.7
20
2.5
1.6
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.
1 page  
AOP601
www.DataSheet4U.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
8
6
4
2
0
0
VDS=15V
ID=7.5A
2 4 6 8 10 12
Qg (nC)
Figure 7: Gate-Charge characteristics
14
1000
900
800
700
600
500
400
300
200
100
0
0
f=1MHz
VGS=0V
Ciss
Coss(FET+Schottky)
Crss
5 10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100
RDS(ON)
limited
10
TJ(Max)=150°C
TA=25°C
100µs
1ms
10µs
10ms
0.1s
1 1s
0.1
0.1
10s
DC
1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001
0.01
0.1
1
10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=50°C/W
1
0.1
0.01
0.00001
0.0001
Single Pulse
PD
Ton T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AOP601.PDF ] | |
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