|
|
Número de pieza | BTB1184J3 | |
Descripción | Low Vcesat PNP Epitaxial Planar Transistor | |
Fabricantes | Cystech Electonics Corp | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BTB1184J3 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1184J3
BVCEO
IC
RCESAT
wSpwewc..DNao.ta: SCh8e1e7Jt43U.com
Issued Date : 2003.04.18
Revised Date : 2009.02.04
Page No. : 1/6
-50V
-3A
130mΩ
Features
• Low VCE(sat)
• Excellent current gain characteristics
• Complementary to BTD1760J3
• RoHS compliant package
Symbol
BTB1184J3
Outline
TO-252
B:Base
C:Collector
E:Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation (TA=25℃)
VCBO
VCEO
VEBO
IC
ICP
Pd(TA=25℃)
-60
-50
-6
-3
-7
1
Power Dissipation (TC=25℃)
Pd(TC=25℃)
15
Junction Temperature
Tj 150
Storage Temperature
Tstg -55~+150
Note : *1. Single Pulse Pw=10ms
*2 . Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger.
*1
*2
Unit
V
V
V
A
W
°C
°C
BTB1184J3
CYStek Product Specification
1 page CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh8e1e7Jt43U.com
Issued Date : 2003.04.18
Revised Date : 2009.02.04
Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
100°C
150°C
−Temperature Max(TS max)
−Time(ts min to ts max)
150°C
60-120 seconds
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTB1184J3
CYStek Product Specification
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BTB1184J3.PDF ] |
Número de pieza | Descripción | Fabricantes |
BTB1184J3 | Low Vcesat PNP Epitaxial Planar Transistor | Cystech Electonics Corp |
BTB1184J3S | Low Vcesat PNP Epitaxial Planar Transistor | CYStech |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |