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PDF APT30GN60BG Data sheet ( Hoja de datos )

Número de pieza APT30GN60BG
Descripción Resonant Mode Combi IGBT
Fabricantes Microsemi Corporation　
Logotipo Microsemi Corporation Logotipo



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No Preview Available ! APT30GN60BG Hoja de datos, Descripción, Manual

TYPICAL PERFORMANCE CURVES
APT30GN60B APTA3P0GTN3060GBN_S6(0GS)
APT30GN60B(G) APT30GN60S(G)
www.DataSheet4U6.c0o0mV
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
• 600V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 6µs Short Circuit Capability
• 175°C Rated
(B)
TO-247
G
C
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
D3PAK
(S)
C
GE
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT30GN60B_S(G)
UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±30
63
37
90
90A @ 600V
203
-55 to 175
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA)
Gate Threshold Voltage (VCE = VGE, I C = 430µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 30A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 30A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
600
5.0 5.8 6.5
1.1 1.5 1.9
1.7
25
TBD
300
N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Units
Volts
µA
nA
Ω
Microsemi Website - http://www.microsemi.com

1 page




APT30GN60BG pdf
TYPICAL PERFORMANCE CURVES
3,000
Cies
1,000
500
100
50
Coes
Cres
10
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT30GN60B_S(G)
100
90 www.DataSheet4U.com
80
70
60
50
40
30
20
10
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.80
0.70
0.60
0.50
D = 0.9
0.7
0.40
0.30
0.20
0.10
0
10-5
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
130
50
F
max
=
min
(fmax,
f
max2)
10
0.05
fmax1 = t d(on) + tr + td(off) + tf
5
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
1 RG = 4.3Ω
fmax2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
5 10 15 20 25 30 35 40 45 50 55
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current

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