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PDF APTGT50TA170P Data sheet ( Hoja de datos )
| Número de pieza | APTGT50TA170P | |
| Descripción | Triple phase leg Trench IGBT Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APTGT50TA170Pwww.DataSheet4U.com
Triple phase leg
Trench IGBT® Power Module
VBUS1
G1
E1
G2
E2
0/VBUS1
VBUS2
G3
E3
U
G4
E4
0/VBUS2
VBUS3
G5
E5
V
G6
E6
0/VBUS3
W
VBUS 1
VBUS 2
VBUS 3
G1 G3 G5
0/VBUS 1 E1 0/VBUS 2 E3 0/VBUS 3 E5
E2 E4 E6
G2 G4 G6
U VW
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Save Operating Area
VCES = 1700V
IC = 50A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Kelvin emitter for easy drive
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a
full bridge
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
70
50
100
±20
310
100A @ 1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed
APT website – http://www.advancedpower.com
1-5
1 page  
APTGT50TA170Pwww.DataSheet4U.com
Operating Frequency vs Collector Current
50
40 ZVS
30
VCE=900V
D=50%
RG=22 Ω
TJ=125°C
TC=75°C
20 ZCS
10 hard
switching
0
0 20 40 60 80
IC (A)
Forward Characteristic of diode
100
75 TJ=25°C
50
TJ=125°C
25
0
0 0.5 1 1.5 2 2.5 3
VF (V)
0.8
0.7 0.9
0.6
0.5 0.7
0.4 0.5
0.3 0.3
0.2
0.1 0.1
0 0.05
0.00001
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Diode
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT50TA170P.PDF ] | |
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