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PDF SI7958DP Data sheet ( Hoja de datos )
| Número de pieza | SI7958DP | |
| Descripción | Dual N-Channel 40-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si7958DP
Viswwhwa.DyatSaSihleiect4oUn.coixm
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
40 0.0165 @ VGS = 10 V
0.020 @ VGS = 4.5 V
PowerPAK SO-8
ID (A)
11.3
10.3
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
D Dual MOSFET for Space Savings
Package
APPLICATIONS
D Automotive*
− 12-V Boardnet
− Motor Drives
− High-Side Switch
*Contact factory for automotive qualification
D1 D2
6.15 mm
D1
8 D1
7
D2
6 D2
5
S1
1
G1
2
5.15 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7958DP-T1—E3 (Lead Free)
G1
S1
N-Channel MOSFET
G2
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
40
"20
11.3
9.0
40
2.9
35
61
3.5
2.2
−55 to 150
7.2
5.8
1.2
1.4
0.9
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72661
S-32677—Rev. A, 29-Dec-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
26
60
2.2
Maximum
35
85
2.7
Unit
_C/W
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
Square Wave Pulse Duration (sec)
10−1
Si7958DP
Viswwhwa.DyatSaSihleiect4oUn.coixm
1
Document Number: 72661
S-32677—Rev. A, 29-Dec-03
www.vishay.com
5
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI7958DP.PDF ] | |
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