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PDF CM1223 Data sheet ( Hoja de datos )
| Número de pieza | CM1223 | |
| Descripción | Industry First Low Capacitance ESD Protection Arrays w/Backdrive Protection | |
| Fabricantes | California Micro Devices | |
| Logotipo |  |
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CM1223www.DataSheet4U.com
Industry First Low Capacitance ESD Protection Arrays w/Backdrive Protection
Features
• 2, 4, and 8 channels of ESD protection with inte-
grated backdrive protection on all lines
• Provides ESD protection to IEC61000-4-2 Level 4
- 8kV contact discharge
- 15kV air discharge
• Low channel input capacitance of 1.0pF typical
• Minimal capacitance change with temperature and
voltage
• Channel I/O to Gnd capacitance difference of
0.02pF typical is ideal for differential signalsl
• Mutual capacitance between signal pin and adja-
cent signal pin - 0.11pF typical
• Zener diode protects supply rail and eliminates the
need for external by-pass capacitors
• Pin compatible with CM1213-02, -04, and -08
• Each I/O pin can withstand over 1000 ESD strikes
• Available in SOT, and MSOP packages
• Lead-free version available
Applications
• USB2.0 ports at 480Mbps in desktop PCs, note-
books and peripherals
• IEEE1394 Firewire® ports at 400Mbps / 800Mbps
• DVI ports, HDMI ports in notebooks, set top boxes,
digital TVs, LCD displays
• UDI and Displayport
• Serial ATA ports in desktop PCs and hard disk
drives
• PCI Express ports
• General purpose high-speed data line ESD
protection
Product Description
The CM1223 family of diode arrays has been designed
to provide ESD protection for electronic components or
sub-systems requiring minimal capacitive loading.
These devices are ideal for protecting systems with
high data and clock rates or for circuits requiring low
capacitive loading. Each ESD channel consists of a
pair of diodes in series which steer the positive or neg-
ative ESD current pulse to either the positive (VP) or
negative (VN) supply rail. A Zener diode is embedded
between VP and VN, absorbing positive ESD strikes
and also providing ESD protection for the VP rail. An
additional diode is added in this device to serve as
backdrive current protection. The CM1223 will protect
against ESD pulses up to ±8kV per the IEC 61000-4-2
standard and using the MIL-STD-883D (Method 3015)
specification for Human Body Model (HBM) ESD, all
pins are protected from contact discharges of greater
than ±15kV.
These devices are particularly well-suited for protecting
systems using high-speed ports such as USB2.0,
IEEE1394 (Firewire®, iLink™), Serial ATA, DVI, HDMI
and corresponding ports in removable storage, digital
camcorders, DVD-RW drives and other applications
where extremely low loading capacitance with ESD
protection are required in a small package footprint.
The CM1223 family of devices is available with
optional lead-free finishing.
Electrical Schematics
VP
CH4
VP CH3
CH8
CH7
VP
CH6 CH5
CH1
CH2
VN
CM1223-02ST/SO
CM1223-02SS/SR
CH1 VN CH2
CM1223-04ST/SO
CM1223-04MS/MR
CH1 CH2
VN CH3
CM1223-08MS/MR
CH4
© 2006 California Micro Devices Corp. All rights reserved.
08/02/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: 408.263.3214 ● Fax: 408.263.7846 ● www.cmd.com
1
1 page  
CM1223www.DataSheet4U.com
ELECTRICAL OPERATING CHARACTERISTICS(SEE NOTE 1)
SYMBOL PARAMETER
CONDITIONS
VP
IP
VSCL
Operating Supply Voltage (VP-VN)
Operating Supply Current
Signal Clamp Voltage
Positive Transients
Negative Transients
(VP-VN)=3.3V
IF = 8mA; TA=25°C
ILEAK
CIN
Channel Leakage Current
Channel Input Capacitance
TA=25°C; VP=5V, VN=0V
At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V;
Note 2 applies
ΔCIN
Channel Input Capacitance
Matching
At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V;
Note 2 applies
CMUTUAL Mutual Capacitance between sig- At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V;
nal pin and adjacent signal pin
Note 2 applies
VESD
ESD Protection
Peak Discharge Voltage at any
channel input, in system
a) Contact discharge per
IEC 61000-4-2 standard
b) Human Body Model,
MIL-STD-883, Method
3015
Notes 2, 4 & 5; TA=25°C
Notes 2, 3 & 5; TA=25°C
VCL Channel Clamp Voltage
Positive Transients
Negative Transients
TA=25°C, IPP = 1A, tP = 8/20uS;
Notes 2 & 5
RDYN
Dynamic Resistance
Positive Transients
Negative Transients
TA=25°C, IPP = 1A, tP = 8/20uS
Any I/O pin to Ground; Notes 2 & 5
MIN
6.7
0.60
±8
±15
TYP
3.3
8.2
0.80
±0.1
1.0
0.02
0.11
+8.8
-1.4
0.7
0.4
MAX
5.5
8.0
UNITS
V
μA
V
V
±1.0 μA
1.5 pF
pF
pF
kV
kV
V
V
Ω
Ω
Note 1: All parameters specified at TA = -40°C to +85°C unless otherwise noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KΩ, VP = 3.3V, VN grounded.
Note 4: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 3.3V, VN grounded.
Note 5: These measurements performed with no external capacitor on VP (VP floating).
© 2006 California Micro Devices Corp. All rights reserved.
08/02/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: 408.263.3214 ● Fax: 408.263.7846 ● www.cmd.com
5
5 Page 
Mechanical Details (cont’d)
SOT23-5 Mechanical Specifications
Dimensions for CM1223-02ST/SO devices packaged
in 5-pin SOT23 packages are presented below.
For complete information on the SOT23-5 package,
see the California Micro Devices SOT23 Package
Information document.
PACKAGE DIMENSIONS
Package
SOT23-5 (JEDEC name is MO-178)
Pins
5
Dimensions
Millimeters
Min Max
Inches
Min Max
A -- 1.45 -- 0.0571
A1 0.00 0.15 0.0000 0.0059
b 0.30 0.50 0.0118 0.0197
c 0.08 0.22 0.0031 0.0087
D 2.75 3.05 0.1083 0.1201
E 2.60 3.00 0.1024 0.1181
E1 1.45 1.75 0.0571 0.0689
e
0.95 BSC
0.0374 BSC
e1
1.90 BSC
0.0748 BSC
L 0.30 0.60 0.0118 0.0236
L1
0.60 REF
0.0236 REF
# per tape
and reel
3000 pieces
Controlling dimension: millimeters
CM1223w w w . D a t a S h e e t 4 U . c o
Mechanical Package Diagrams
TOP VIEW
e1
e
54
E1 E
12 3
b
SIDE VIEW
D
A
END VIEW
A1
c
L1
L
© 2006 California Micro Devices Corp. All rights reserved.
08/02/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: 408.263.3214 ● Fax: 408.263.7846 ● www.cmd.com
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet CM1223.PDF ] | |
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