|
|
PDF AUIRF540Z Data sheet ( Hoja de datos )
| Número de pieza | AUIRF540Z | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AUIRF540Z (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
AUTOMOTIVE GRADE
PD - 96326
AUIRF540Z
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRF540ZS
HEXFET® Power MOSFET
D V(BR)DSS
100V
RDS(on) typ. 21mΩ
G max. 26.5mΩ
S ID
36A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
Absolute Maximum Ratings
TO-220AB
AUIRF540Z
D2Pak
AUIRF540ZS
G
Gate
D
Drain
S
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (Tested )
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally limited)
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
36
25
140
92
0.61
± 20
83
120
See Fig.12a, 12b, 15, 16
-55 to + 175
300(1.6mm from case)
y y10 lbf in (1.1N m)
A
W
W/°C
V
mJ
A
mJ
°C
Parameter
Typ.
Max. Units
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
HEXFET® is a registered trademark of International Rectifier.
–––
0.50
–––
–––
1.64
–––
62
°C/W
40
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10
1 page  
www.DataSheet4U.com
AUIRF540Z/S
3000
2500
2000
1500
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
500
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
ID= 22A
16
12
VDS= 80V
VDS= 50V
VDS= 20V
8
4
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
10 20 30 40 50
QG Total Gate Charge (nC)
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 175°C
10.0
1.0
0.1
0.2
TJ = 25°C
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD, Source-toDrain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
1msec
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page 
www.DataSheet4U.com
AUIRF540Z/S
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUIRF540ZS
IR Logo
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet AUIRF540Z.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AUIRF540Z | Power MOSFET ( Transistor ) |  Infineon |
| AUIRF540Z | HEXFET Power MOSFET | International Rectifier |
| AUIRF540ZS | Power MOSFET ( Transistor ) | Infineon |
| AUIRF540ZS | HEXFET Power MOSFET | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |