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PDF SI2343CDS Data sheet ( Hoja de datos )
| Número de pieza | SI2343CDS | |
| Descripción | P-Channel 30-V MOSFET | |
| Fabricantes | VISHAY | |
| Logotipo |  |
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P-Channel 30-V (D-S) MOSFET
Si2343CDSwww.DataSheet4U.com
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.045 at VGS = - 10 V
- 30
0.075 at VGS = - 4.5 V
ID (A)a, e
- 5.9
- 4.6
Qg (Typ.)
7 nC
TO-236
(SOT-23)
G1
S2
3D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• Notebook Adaptor Switch
• DC/DC Converter
S
G
Top View
Si2343CDS (P1)*
* Marking Code
Ordering Information: Si2343CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 30
± 20
- 5.9
- 4.7
- 4.2b, c
- 3.3b, c
- 25
- 2.1
- 1b, c
2.5
1.6
1.25b, c
0.8b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 166 °C/W.
e. Package Limited.
Symbol
RthJA
RthJF
Typical
75
40
Maximum
100
50
Unit
°C/W
Document Number: 65474
S09-2270-Rev. A, 02-Nov-09
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
Si2343CDSwww.DataSheet4U.com
Vishay Siliconix
6
Package Limited
4
2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
2.5 1.0
2.0 0.8
1.5 0.6
1.0 0.4
0.5 0.2
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Foot
150
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65474
S09-2270-Rev. A, 02-Nov-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI2343CDS.PDF ] | |
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