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Número de pieza | RJP6085DPK | |
Descripción | Silicon N Channel IGBT High Speed Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJP6085DPK (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! RJP6085DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
• High speed switching
• Low collector to emitter saturation voltage
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
1
2
3
G
C
E
www.DataSheet4U.com
REJ03G1862-0100
Rev.1.00
Nov 09, 2009
1. Gate
2. Collecotor
3. Emitter
4. Collector (Flange)
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25°C
Symbol
VCES
VGES
IC
IC(peak) Note1
PC Note2
θj-c Note2
Tj
Tstg
Ratings
600
±30
40
80
178.5
0.7
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/W
°C
°C
REJ03G1862-0100 Rev.1.00 Nov 09, 2009
Page 1 of 5
1 page RJP6085DPK
Package Dimensions
Package Name
TO-3P
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
φ3.2 ± 0.2
Previous Code
TO-3P / TO-3PV
MASS[Typ.]
5.0g
4.8 ± 0.2
1.5
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Unit: mm
1.6
1.4 Max
2.0
2.8
1.0 ± 0.2
3.6 0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
0.6 ± 0.2
Ordering Information
Part No.
RJK6085DPK-00-T0
Quantity
360 pcs
Box (Tube)
Shipping Container
REJ03G1862-0100 Rev.1.00 Nov 09, 2009
Page 5 of 5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet RJP6085DPK.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJP6085DPK | Silicon N Channel IGBT High Speed Power Switching | Renesas Technology |
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