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PDF HMC757LP4E Data sheet ( Hoja de datos )
| Número de pieza | HMC757LP4E | |
| Descripción | 1/2 Watt Power Amplifier SMT | |
| Fabricantes | Hittite Microwave Corporation | |
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v00.0610
Typical Applications
The HMC757LP4E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
9 • Military & Space
Functional Diagram
HMC757LP4E
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Features
Saturated Output Power: 27.5 dBm @ 21% PAE
High Output IP3: 34.5 dBm
High Gain: 20.5 dB
DC Supply: +5V @ 400 mA
No External Matching Required
24 Lead 4x4 mm SMT Package: 16 mm²
General Description
The HMC757LP4E is a three stage GaAs pHEMT
MMIC 1 Watt Power Amplifier which operates be-
tween 16 and 24 GHz. The HMC757LP4E provides
20.5 dB of gain, and 27.5 dBm of saturated output
power and 21% PAE from a +5V supply. The RF I/Os
are DC blocked and matched to 50 Ohms. The 4x4
mm plastic package eliminates the need for wirebon-
dig, and is compatible with surface mount manufactur-
ing techniques.
Electrical Specifications, TA = +25° C, Vdd = +5V, Idd = 400mA [1]
Parameter
Min. Typ.
Frequency Range
16 - 24
Gain
18.5
20.5
Gain Variation Over Temperature
0.028
Input Return Loss
11
Output Return Loss
12
Output Power for 1 dB Compression (P1dB)
24.5
26.5
Saturated Output Power (Psat)
27.5
Output Third Order Intercept (IP3)[2]
34.5
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 400 mA typical.
[2] Measurement taken at Pout / Tone = +16 dBm
400
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1 page  
v00.0610
Gain & Power vs.
Supply Current @ 20 GHz
35
30
9
25
20
15
Gain
P1dB
Psat
10
350 360 370 380 390 400
Idd (mA)
HMC757LP4E
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Gain & Power vs.
Supply Voltage @ 20 GHz
35
30
25 Gain
P1dB
Psat
20
15
10
5
5.5 6 6.5
Vdd (V)
7
Power Dissipation
2.5
16 GHz
2.3
18 GHz
20 GHz
22 GHz
24 GHz
2.1
1.9
1.7
1.5
-18 -14 -10
-6
-2
2
INPUT POWER (dBm)
6 10
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 40 mW/°C above 85 °C)
Thermal Resistance
(channel to exposed ground paddle)
Storage Temperature
Operating Temperature
7V
23 dBm
150 °C
2.7 W
24.85 C/W
-65 to +150 °C
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+5.0
400
+5.5
400
+6.0
400
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 400 mA at +5.5V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC757LP4E.PDF ] | |
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