|
|
Número de pieza | APTC60SKM35T1G | |
Descripción | Buck chopper Super Junction MOSFET Power Module | |
Fabricantes | Microsemi Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTC60SKM35T1G (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! APTC60SKM35T1G
Buck chopper
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 35mΩ max @ Tj = 25°C
ID = 72A @ Tc = 25°C
56
11
Q1
7
8
CR2
3 NTC
4
12
12
Application
• AC and DC motor control
• Switched Mode Power Supplies
Features
•
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
600
72
54
200
±20
35
416
20
1
1800
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
www.DataSheet.in
1 page Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
25
50 75 100 125
TJ, Junction Temperature (°C)
150
Threshold Voltage vs Temperature
1.1
1.0
0.9
0.8
0.7
0.6
25
50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
1000
100
Crss
10
0
10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTC60SKM35T1G
ON resistance vs Temperature
3.0
2.5
VGS=10V
ID= 72A
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
limited by RDSon
100
100 µs
10 Single pulse
TJ=150°C
TC=25°C
1 ms
10 ms
1
1 10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
ID=72A
TJ=25°C
VDS=120V
10 VDS=300V
8 VDS=480V
6
4
2
0
0 100 200 300 400 500 600
Gate Charge (nC)
www.DataSheet.in
www.microsemi.com
5–6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet APTC60SKM35T1G.PDF ] |
Número de pieza | Descripción | Fabricantes |
APTC60SKM35T1G | Buck chopper Super Junction MOSFET Power Module | Microsemi Corporation |
APTC60SKM35T1G | Buck chopper Super Junction MOSFET Power Module | Microsemi |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |