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PDF NTD5867NL Data sheet ( Hoja de datos )
| Número de pieza | NTD5867NL | |
| Descripción | N-Channel Power MOSFET 60 V / 20 A / 39 m ome | |
| Fabricantes | ON Semiconductor | |
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NTD5867NL
N-Channel Power MOSFET
60 V, 20 A, 39 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 ms)
Continuous Drain
Current (RqJC)
Power Dissipation
(RqJC)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
60
"20
"30
20
13
36
76
−55 to
150
V
V
V
A
W
A
°C
Source Current (Body Diode)
IS 20 A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 19 A, L = 0.1 mH, TJ = 25°C)
EAS
18 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction−to−Case (Drain)
RqJC
Junction−to−Ambient − Steady State (Note 1) RqJA
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
Value
3.5
45
Unit
°C/W
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
39 mW @ 10 V
50 mW @ 4.5 V
ID MAX
20 A
18 A
D
G
S
N−CHANNEL MOSFET
4
4
12
3
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
1 23
IPAK
CASE 369D
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
Y = Year
WW = Work Week
5867NL = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 0
1
Publication Order Number:
NTD5867NL/D
1 page  
NTD5867NL
TYPICAL PERFORMANCE CURVES
10
1.0 D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.000001
0.01
SINGLE PULSE
0.00001
www.DataSheet4U.com
P(pk)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
t2
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
0.0001
t, TIME (ms)
0.001
0.01
0.1
Figure 13. Thermal Response
http://onsemi.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTD5867NL.PDF ] | |
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