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Datasheet PH2508 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PH2508 | DIODE MODULE www.DataSheet4U.net
DIODE MODULE
FEATURES
* Isolated Base * High Surge Capability * UL Recognized, File No. E187184
250A/300 to 800V
PH2503,PH2504,PH2508
OUTLINE DRAWING
TYPICAL APPLICATIONS
* Rectified For General Use
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage Non Repetitive Pea |  Nihon Inter Electronics Corporation | diode |
PH2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | PH20 | Diode, Rectifier American Microsemiconductor  | ||
| 2 | PH20100S | N-channel TrenchMOS standard level FET PH20100S
N-channel TrenchMOS™ standard level FET
Rev. 02 — 17 August 2004 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Lo  NXP Semiconductors | ||
| 3 | PH2222 | NPN switching transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PH2222A NPN switching transistor
Product specification Supersedes data of 1997 Sep 04 1999 Apr 27
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V) NXP Semiconductors | ||
| 4 | PH2222A | NPN switching transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PH2222A NPN switching transistor
Product specification Supersedes data of 1997 Sep 04 1999 Apr 27
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V) NXP Semiconductors | ||
| 5 | PH2226-11OM | Radar Pulsed Power Transistor/ IlOW/ loops Pulse/ 10% Duty 2.25 - 2.55 GHz =_
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an AMP comcww
Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2226-11 OM 2.25 - 2.55 GHz
Features
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,553 _
(22 95)
so3
v2.00
I
NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors Gold Met  Tyco Electronics | ||
| 6 | PH2226-50 | Radar Pulsed Power Transistor/ 5OW/ loops Pulse/ 10% Duty 2.2 - 2.6 GHz ,s== 7--z E -== *
2= .---- = = FE
an AMP company
Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M
Features
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NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors Gold Metalization Sy Tyco Electronics | ||
| 7 | PH2323-1 | CW Power Transistor/ 1W 2.3 GHz 3
.------
an AMP comDanv
CW Power Transistor, 2.3 GHz
Features
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1W
PH2323-1
v2.00
NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic Metal/Ceramic Package Tyco Electronics |
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