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PDF SI2333CDS Data sheet ( Hoja de datos )
| Número de pieza | SI2333CDS | |
| Descripción | P-Channel 12-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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P-Channel 12-V (D-S) MOSFET
Si2333CDS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)a
0.035 at VGS = - 4.5 V
- 5.1
- 12
0.045 at VGS = - 2.5 V
- 4.5
0.059 at VGS = - 1.8 V
- 3.9
Qg (Typ.)
9 nC
FEATURES
• TrenchFET® Power MOSFET
APPLICATIONS
• Load Switch
• PA Switch
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2333CDS (O3)*
* Marking Code
Ordering Information: Si2333CDS-T1-E3 (Lead (Pb)-free)
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
≤5s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 166 °C/W.
Symbol
RthJA
RthJF
Typical
75
40
Limit
- 12
±8
- 7.1
- 5.7
- 5.1b, c
- 4.0b, c
- 20
- 1.0
- 0.63b, c
2.5
1.6
1.25b, c
0.8b, c
- 55 to 150
Maximum
100
50
Unit
V
A
W
°C
Unit
°C/W
Document Number: 68717
S-81445-Rev. A, 23-Jun-08
www.vishay.com
1
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1 page  
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Si2333CDS
Vishay Siliconix
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
100
1000
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJF = 50 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68717.
Document Number: 68717
S-81445-Rev. A, 23-Jun-08
www.vishay.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SI2333CDS.PDF ] | |
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