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PDF SI4172DY Data sheet ( Hoja de datos )
| Número de pieza | SI4172DY | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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N-Channel 30-V (D-S) MOSFET
Si4172DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.012 at VGS = 10 V
0.015 at VGS = 4.5 V
ID (A)a
15
13
Qg (Typ.)
6.8 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• Optimized for High-Side Synchronous
Rectifier Operation
• 100 % Rg Tested
• 100 % UIS Tested
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
APPLICATIONS
• Notebook CPU Core
- High-Side Switch
D
G
Top View
Ordering Information: Si4172DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
30
± 20
15
12
11b, c
9b, c
50
3.8
2.1b, c
22
24
4.5
2.8
2.5b, c
1.6b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Base on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 69000
S-82665-Rev. A, 03-Nov-08
Symbol
RthJA
RthJF
Typical
38
22
Maximum
50
28
Unit
°C/W
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Si4172DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
18
15
12
9
6
3
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
6 2.0
5
1.5
4
3 1.0
2
0.5
1
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69000
S-82665-Rev. A, 03-Nov-08
www.vishay.com
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI4172DY.PDF ] | |
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