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PDF SI4186DY Data sheet ( Hoja de datos )
| Número de pieza | SI4186DY | |
| Descripción | N-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si4186DY
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0026 at VGS = 10 V
20
0.0032 at VGS = 4.5 V
ID (A)a
35.8
32.2
Qg (Typ.)
28.7 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• OR-ing
• DC-DC Low-Side Switch
D
G
Top View
Ordering Information: Si4186DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
20
± 20
35.8
26.5
25.3b, c
20.1b, c
70
5.4
2.7b, c
30
45
6.0
3.3
3.0b, c
1.9b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typical
33
16
Maximum
42
21
Unit
°C/W
Document Number: 65152
S09-1532-Rev. A, 10-Aug-09
www.vishay.com
1
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
Si4186DY
Vishay Siliconix
32
24
16
8
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
7.5 2.0
6.0 1.6
4.5 1.2
3.0 0.8
1.5 0.4
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Foot
150
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65152
S09-1532-Rev. A, 10-Aug-09
www.vishay.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI4186DY.PDF ] | |
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