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PDF SI4210DY Data sheet ( Hoja de datos )
| Número de pieza | SI4210DY | |
| Descripción | Dual N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si4210DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0355 at VGS = 10 V
30
0.044 at VGS = 4.5 V
ID (A)
6.5
5.8
Qg (Typ.)
3.7 nC
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4210DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % UIS Tested
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Set Top Box
• Low Current DC/DC
D1
D2
G1
S1
N-Channel MOSFET
G2
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
30
± 20
6.5a
5.2
5.2b, c
4.2b, c
24
2.25
1.48b, c
5
1.25
2.7
1.77
1.78b, c
1.14b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Package limited, TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
58
38
Maximum
70
45
Unit
°C/W
Document Number: 65151
S09-1821-Rev. A, 14-Sep-09
www.vishay.com
1
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
7.5
Si4210DY
Vishay Siliconix
6.0
4.5
3.0
1.5
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Current Derating*
150
3.5 1.5
2.8 1.2
2.1 0.9
1.4 0.6
0.7 0.3
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Foot
150
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65151
S09-1821-Rev. A, 14-Sep-09
www.vishay.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI4210DY.PDF ] | |
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