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PDF SI7309DN Data sheet ( Hoja de datos )
| Número de pieza | SI7309DN | |
| Descripción | P-Channel 60-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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P-Channel 60-V (D-S) MOSFET
Si7309DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 60
RDS(on) (Ω)
0.115 at VGS = - 10 V
0.146 at VGS = - 4.5 V
ID (A)a
-8
-8
Qg (Typ.)
14.5 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK® Package
with Small Size and Low 1.07 mm Profile
PowerPAK 1212-8
3.30 mm
S
1S
3.30 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information: Si7309DN-T1-E3 (Lead (Pb)-free)
Si7309DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• CCFL inverter
• Class D-amp
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
TC = 25 °C
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (10 µs Width)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
TC = 25 °C
IAS
EAS
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
- 60
± 20
- 8a
- 7.8
- 3.9b, c
- 3.1b, c
- 20
- 8a
- 2.7b, c
- 15
11
19.8
12.7
3.2b, c
2.1b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, d
Maximum Junction-to-Case (Drain)
Steady State
RthJA
RthJC
31
5
39
°C/W
6.3
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 73434
S-83051-Rev. B, 29-Dec-08
www.vishay.com
1
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12 25
10
8
Package Limited
6
4
2
20
15
10
5
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
0
Si7309DN
Vishay Siliconix
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
100
10
TA =
L · ID
BV - VDD
1
10-6
10-5
10-4
10-3
TA - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73434
S-83051-Rev. B, 29-Dec-08
www.vishay.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI7309DN.PDF ] | |
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