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Datasheet RJK1052DPB Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1RJK1052DPBN-Channel Power MOSFET, Transistor

Preliminary Datasheet RJK1052DPB Silicon N Channel Power MOS FET Power Switching Features     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting R07DS0083EJ0102 (Previous: REJ03G1769-0101) Rev.1.02 Jul 30, 2010  Low on-resistance RDS(on) = 15 m
Renesas
Renesas		mosfet


RJK Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1RJK005N03Drive Nch MOS FET

RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) SMT3 2.9 1.1 0.4 (3) zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive). 0.8 (2) (1) 1.6 2.8 0.95 0.95 0.15 1.9 zApplications Switc
ROHM Semiconductor
ROHM Semiconductor		data
2RJK005N03FRANch 30V 500mA Small Signal MOSFET

RJK005N03FRA 　　Nch 30V 500mA Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 30V 580mΩ ±500mA 200mW lFeatures 1) Low on-resistance 2) Ultra low voltage drive (2.5V drive) 3) AEC-Q101 Qualified lOutline SOT-346 SC-59 SMT3 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lApplic
ROHM Semiconductor
ROHM Semiconductor		mosfet
3RJK0204DPASilicon N Channel Power MOS FET

Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m
Renesas Technology
Renesas Technology		data
4RJK0206DPASilicon N Channel Power MOS FET

Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m
Renesas Technology
Renesas Technology		data
5RJK0208DPASilicon N Channel Power MOS FET

Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m
Renesas Technology
Renesas Technology		data
6RJK0210DPASilicon N Channel Power MOS FET Power Switching

Preliminary Datasheet RJK0210DPA Silicon N Channel Power MOS FET Power Switching Features      Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free REJ03G19
Renesas Technology
Renesas Technology		data
7RJK0211DPASilicon N Channel Power MOS FET Power Switching

Preliminary Datasheet RJK0211DPA Silicon N Channel Power MOS FET Power Switching Features      Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free REJ03G19
Renesas Technology
Renesas Technology		data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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