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Número de pieza | RJP60D0DPK | |
Descripción | Silicon N Channel IGBT | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJP60D0DPK (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! RJP60D0DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)
Gate to emitter voltage rating 30 V
Pb-free lead plating and chip bonding
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
Preliminary Datasheet
R07DS0166EJ0300
Rev.3.00
Jul 13, 2011
C
1
23
1. Gate
G 2. Collector
3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
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Symbol
VCES
VGES
IC
IC
ic(peak) Note1
PC Note2
j-c Note2
Tj
Tstg
Ratings
600
±30
45
22
90
140
0.89
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS0166EJ0300 Rev.3.00
Jul 13, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page RJP60D0DPK
10
Transfer Characteristics (Typical)
80
Ta = 25°C
60 150°C
40
20
VCE = 10 V
Pulse Test
0
0 4 8 12 16
Gate to Emitter Voltage VGE (V)
Thermal Impedance vs. Pulse Width
Preliminary
1
0.1
0.01
100 μ
1m
www.DataSheet.net/
10 m
100 m
1
Pulse Width PW (s)
Tc = 25°C
Single pulse
10 100
Switching Time Test Circuit
Diode clamp/
D.U.T
L
D.U.T/
VCC
Rg Driver
Waveform
90%
Vin 10%
90%
90%
Ic
td(on)
10%
tr
ton
td(off)
toff
10%
tf
R07DS0166EJ0300 Rev.3.00
Jul 13, 2011
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJP60D0DPK.PDF ] |
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