Datasheet 2N6491 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	2N6491	COMPLEMENTARY SILICON POWER TRANSISTORS 2N6486 2N6487 2N6488 NPN 2N6489 2N6490 2N6491 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6486, 2N6489 series types are complementary silicon power transistors designed for general purpose switching and amplifier applicat	Central Semiconductor	transistor
2	2N6491	COMPLEMENTARY SILICON POWER TRANSISTORS 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High DC Current Gain • High Current Gain − Bandwidth Product • TO−220 Compact Package • The	ON Semiconductor	transistor
3	2N6491	POWER TRANSISTORS(15A/75W) A A A A	Mospec Semiconductor	transistor
4	2N6491	NPN/PNP PLASTIC POWER TRANSISTORS	Boca Semiconductor Corporation	transistor
5	2N6491	Trans GP BJT PNP 80V 15A 3-Pin(3+Tab) TO-220 Box	New Jersey Semiconductor	data

2N6 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	2N60	N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60 2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact	Unisonic Technologies	mosfet
2	2N60-E	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60-E 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.	Unisonic Technologies	mosfet
3	2N6008	Series 2N Transistors	Sprague	transistor
4	2N6009	Series 2N Transistors	Sprague	transistor
5	2N6010	Silicon Transistors	Semiconductor	transistor
6	2N6027	SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte	Central Semiconductor	transistor
7	2N6027	Programmable Unijunction Transistor 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge	ON Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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