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Datasheet PJUSB208 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1PJUSB208Low Capacitance Diode Array

PJUSB208 Low Capacitance Diode Array This diode array is configured to protect up to four data transmission lines acting as a line terminator, minimizing overshoot and undershoot conditions due to bus impedance as well as protect against over-voltage events as electrostatic discharges. DRAFT SPEC
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diode
2PJUSB208Low Capacitance Diode Array

PJUSB208-PJUSB208R Low Capacitance Diode Array This diode array is configured to protect up to four data transmission lines acting as a line terminator, minimizing overshoot and undershoot conditions due to bus impedance as well as protect against over-voltage events as electrostatic discharges. SOT
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diode
3PJUSB208DWLow Capacitance Diode Array

PJUSB208DW LOW CAPACITANCE DIODE ARRAY The PJUSB208DW has a low capacitance of 0.9pF and operates with virtually no insertion loss to 1GHz. This makes the device ideal for usage of high-speed data lines such as USB2.0, Firewire, DVI, and gigabit Ethernet interfaces. The low capacitance array configu
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diode
4PJUSB208RLow Capacitance Diode Array

PJUSB208-PJUSB208R Low Capacitance Diode Array This diode array is configured to protect up to four data transmission lines acting as a line terminator, minimizing overshoot and undershoot conditions due to bus impedance as well as protect against over-voltage events as electrostatic discharges. SOT
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diode


PJU Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1PJU14P06A60V P-Channel Enhancement Mode MOSFET

PPJU14P06A / PJD14P06A 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -14 A Features  RDS(ON), VGS@-10V,ID@-6A<110mΩ  RDS(ON), [email protected],ID@-3A<130mΩ  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead fr
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Pan Jit International
mosfet
2PJU1N60600V N-Channel Enhancement Mode MOSFET

PJU1N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 1A, 600V, RDS(ON)=11Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance wi
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mosfet
3PJU1N80800V N-Channel Enhancement Mode MOSFET

PJP1N80 / PJU1N80 800V N-Channel Enhancement Mode MOSFET FEATURES • 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In com
Pan Jit International
Pan Jit International
mosfet
4PJU1NA50500V N-Channel MOSFET

PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50 500V N-Channel MOSFET Voltage 500 V Current 1A Features  RDS(ON), VGS@10V,[email protected]<9Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU
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Pan Jit International
mosfet
5PJU1NA60A600V N-Channel MOSFET

PPJN1NA60A / PJW1NA60A / PJU1NA60A / PJD1NA60A 600V N-Channel MOSFET Voltage 600 V Current 1A Features  RDS(ON), VGS@10V,[email protected]<7.9Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 201
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Pan Jit International
mosfet
6PJU1NA80800V N-Channel MOSFET

PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 800V N-Channel MOSFET Voltage 800 V Current 1A Features  RDS(ON), VGS@10V,[email protected]<16Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65
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Pan Jit International
mosfet
7PJU2N70700V N-Channel Enhancement Mode MOSFET

PJF2N70 / PJU2N70 700V N-Channel Enhancement Mode MOSFET FEATURES • 700V, RDS(ON)=5.5Ω@VGS=10V, ID=2A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In complian
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Pan Jit International
mosfet



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Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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