|
|
Datasheet 2N869 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N869 | Bipolar PNP Device in a Hermetically sealed TO18 Metal Package 2N869
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package.
Bipolar PNP Device. VCEO = 25V
0.48 (0.019) 0.41 (0.016) dia.
IC = 0.1A
All Semelab hermetically sealed products can be processed in accordance wit |  Seme LAB | data |
| 2 | 2N869 | (2N8xx) PNP Metal Can |  Central Semiconductor | data |
| 3 | 2N869 | Trans GP BJT PNP 25V 0.1A 3-Pin TO-18 |  New Jersey Semiconductor | data |
| 4 | 2N869A | Silicon Small Signal PNP Transistor |  NES | transistor |
| 5 | 2N869A | Bipolar PNP Device 2N869A
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar PNP Device in a Hermetically sealed TO18
Metal Package.
0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.
31 2
1 – Emitter
TO18 (TO206AA) PINOUTS
2 – Base
3 – Collector
Bipolar PNP Device.
VCE | Seme LAB | data |
2N8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N80 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N80
·FEATURES ·Drain Current ID= 2.4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 7.0Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,conver  Inchange Semiconductor mosfet | | |
| 2 | 2N80 | 800V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N80
2A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state res  Unisonic Technologies mosfet | | |
| 3 | 2N80Z | 800V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N80Z
2A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 2N80Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state r Unisonic Technologies mosfet | | |
| 4 | 2N8238 | Silicon Controlled Rectifiers New Jersey Semiconductor rectifier | | |
| 5 | 2N8240 | Silicon Controlled Rectifiers New Jersey Semiconductor rectifier | | |
| 6 | 2N834 | NPN HIGH SPEED SATURATED LOGIC SWITCHES Free Datasheet http://www.datasheet4u.net/
 New Jersey Semi-Conductor data | | |
| 7 | 2N834 | Trans GP BJT NPN 25V 3-Pin TO-18 Box New Jersey Semiconductor data | |
| Esta página es del resultado de búsqueda del 2N869. Si pulsa el resultado de búsqueda de 2N869 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |