PDF SIHG47N60E Data sheet ( Hoja de datos )

Número de pieza	SIHG47N60E
Descripción	Power MOSFET ( Transistor )
Fabricantes	Vishay Siliconix
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No Preview Available ! www.vishay.com SiHG47N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 220 36 60 Single 0.064 D TO-247AC G S D G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses • Ultra Low Gate Charge (Qg) • Avalanche Energy Rated (UIS) • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supplies (SMPS) • Power Factor Correction Power Supplies (PFC) • Lighting - High-Intensity Discharge (HID) - Fluorescent Ballast Lighting • Industrial - Welding - Induction Heating - Motor Drives - Battery Chargers - Renewable Energy - Solar (PV Inverters) ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free http://www.DataSheet4U.net/ TO-247AC SiHG47N60E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz) VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Linear Derating Factor Single Pulse Avalanche Energyb EAS Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ, Tstg Drain-Source Voltage Slope Reverse Diode dV/dtd TJ = 125 °C dV/dt Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 73.5 mH, Rg = 25 , IAS = 6.4 A. c. 1.6 mm from case. d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C. LIMIT 600 ± 20 30 47 30 145 3 1500 357 - 55 to + 150 37 11 300c UNIT V A W/°C mJ W °C V/ns °C S11-2089 Rev. B, 31-Oct-11 1 Document Number: 91474 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 datasheet pdf - http://www.DataSheet4U.net/ 1 page www.vishay.com SiHG47N60E Vishay Siliconix VDS VGS RG RD D.U.T. 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % +- VDD Fig. 12 - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 13 - Switching Time Waveforms VDS Vary tp to obtain required IAS RG 10 V tp L D.U.T IAS 0.01 Ω + - VDD Fig. 14 - Unclamped Inductive Test Circuit VDS tp VDD VDS IAS Fig. 15 - Unclamped Inductive Waveforms http://www.DataSheet4U.net/ 10 V QGS VG QG QGD Charge Fig. 16 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 12 V 50 kΩ 0.2 µF 0.3 µF + D.U.T. - VDS VGS 3 mA IG ID Current sampling resistors Fig. 17 - Gate Charge Test Circuit S11-2089 Rev. B, 31-Oct-11 5 Document Number: 91474 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 datasheet pdf - http://www.DataSheet4U.net/ 5 Page

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