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Datasheet 2N918 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N918 | AMPLIFIER TRANSISTOR 2N918
JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE 10
(TO-72 (TO-206AF)
AMPLIFIER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device | Motorola Semiconductors | transistor |
2 | 2N918 | NPN LOW POWER SILICON TRANSISTOR TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DEVICES
NPN LOW POWER SILICON TRANSISTOR
Qualified p | Microsemi | transistor |
3 | 2N918 | NPN Transistoor OEM: Telefunken
2N918
Datasheet
http://www.semicon-data.com/
OEM: Telefunken
2N918
Datasheet
http://www.semicon-data.com/
| Telefunken | data |
4 | 2N918 | NPN SILICON HIGH FREQUENCY TRANSISTOR 2N918
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications.
MAXIMUM RATINGS
IC 50 mA
VCE PDISS
TJ TSTG
15 V 300 mW @ TC = 25 OC 200 mW @ TC = 25 OC
-65 OC to +200 OC -65 OC to +200 OC
PACKAGE STYLE TO-72
1 = | Advanced Semiconductor | transistor |
5 | 2N918 | NPN SILICON RF TRANSISTOR 2N918 NPN SILICON RF TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N918 type is an NPN silicon RF transistor, manufactured by the epitaxial planar process and designed for high frequency amplifier and oscillator applications.
MARKING: FULL PART NUMBER
TO-7 | Central Semiconductor | transistor |
2N9 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N90 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N90
·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 8.0Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,converte Inchange Semiconductor mosfet | | |
2 | 2N90 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N90
2A, 900V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and Unisonic Technologies mosfet | | |
3 | 2N909 | SI NPN LO-PWR BJT New Jersey Semi-Conductor data | | |
4 | 2N914 | NPN Transistoor OEM: Telefunken
2N914
Datasheet
http://www.semicon-data.com/
OEM: Telefunken
2N914
Datasheet
http://www.semicon-data.com/
OEM: Telefunken
2N914
Datasheet
http://www.semicon-data.com/
OEM: Telefunken
2N914
Datasheet
http://www.semicon-data.com/
Telefunken data | | |
5 | 2N914 | Transistor ETC transistor | | |
6 | 2N914 | SWITCHING TRANSISTOR Motorola Semiconductors transistor | | |
7 | 2N915 | GENERAL PURPOSE TRANSISTOR 2N915
CASE 22, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Refer to 2N3946 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derat Motorola Semiconductors transistor | |
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