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Datasheet PTFA070601F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PTFA070601F | Thermally-Enhanced High Power RF LDMOS FETs PTFA070601E PTFA070601F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz
Description
The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770 MHz band. Features include in |  Infineon | data |
PTF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PTF | Metal Film Resistors www.vishay.com
PTF
Vishay Dale
Metal Film Resistors, High Precision, High Stability
FEATURES
• Extremely low temperature coefficient of resistance
• Very low noise and voltage coefficient • Very good high frequency characteristics • Can replace wirewound bobbins • Proprietary epoxy coat  Vishay data | | |
| 2 | PTF080101 | LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ Infineon Technologies AG transistor | | |
| 3 | PTF080101S | LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ Infineon Technologies AG transistor | | |
| 4 | PTF080451 | LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
• • B Infineon Technologies AG transistor | | |
| 5 | PTF080451E | LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
• • B Infineon Technologies AG transistor | | |
| 6 | PTF080601 | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Typ Infineon Technologies AG transistor | | |
| 7 | PTF080601A | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Typ Infineon Technologies AG transistor | |
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