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PDF AUIRFR4292 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFR4292 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 97792
AUIRFR4292
Features
● Advanced Process Technology
● Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
G
AUIRFU4292
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) typ.
max.
S ID
250V
275m
345m
9.3A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
D
S
G
D-Pak
AUIRFR4292
S
D
G
I-Pak
AUIRFU4292
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested )
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
gRepetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
jRJC
Junction-to-Case
iRJA Junction-to-Ambient (PCB Mount)
RJA Junction-to-Ambient
Max.
9.3
6.6
40
100
0.67
± 20
130
97
See Fig.12a, 12b, 15, 16
-55 to + 175
300
Typ.
–––
–––
–––
Max.
1.5
50
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datashe0e6t/h1t8tp/1:/2/www.datasheet4u.com/
1 page  
AUIRFR/U4292
100000
10000
1000
100
10
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
Coss
Crss
1
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
14.0
12.0
10.0
8.0
ID= 5.6A
VDS= 200V
VDS= 125V
VDS= 50V
6.0
4.0
2.0
0.0
0
2 4 6 8 10 12 14 16 18
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
TJ = 175°C
10
TJ = 25°C
1.0
0.4
VGS = 0V
0.5 0.6 0.7 0.8 0.9 1.0
VSD, Source-to-Drain Voltage (V)
1.1
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
1msec
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
AUIRFR/U4292
I-Pak (TO-251AA) Part Marking Information
Part Number
IR Logo
AUFU4292
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
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| PDF Descargar | [ Datasheet AUIRFR4292.PDF ] | |
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