|
|
Número de pieza | DMN3112S | |
Descripción | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMN3112S (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! DMN3112S
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Please click here to visit our online spice models database.
Features
Mechanical Data
• Low On-Resistance:
57mΩ @ VGS = 10V
112mΩ @ VGS = 4.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
SOT-23
Drain
D
Gate
Source
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Drain Current (Note 1)
Body-Diode Continuous Current (Note 1)
TA = 25°C
TA = 70°C
Pulsed
Equivalent Circuit
Symbol
VDSS
VGSS
ID
IDM
IS
GS
TOP VIEW
Value
30
±20
5.8
4.2
20
2.0
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BVDSS
IDSS
IGSS
30
⎯
⎯
⎯⎯
V
⎯ 800 nA
⎯
±80
±800
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(th)
1.3
1.9
2.2
V
RDS (ON)
⎯
⎯
47
92
57
112
mΩ
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
|Yfs| ⎯ 4.7 ⎯
VSD ⎯ 0.78 1.1
S
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss ⎯ 268 ⎯
Coss
⎯
73
⎯
Crss
⎯
50
⎯
pF
pF
pF
Notes:
1. Device mounted on FR-4 PCB. t ≤5 sec.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.2A
VDS = 5V, ID = 4.2A
VGS = 0V, IS = 2.0A
VDS = 5V, VGS = 0V
f = 1.0MHz
DMN3112S
Document number: DS31445 Rev. 2 - 2
1 of 4
www.diodes.com
July 2008
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet DMN3112S.PDF ] |
Número de pieza | Descripción | Fabricantes |
DMN3112S | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes |
DMN3112S | N-CHANNEL ENHANCEMENT MODE MOSFET | TY Semiconductor |
DMN3112SSS | SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |