|
|
Número de pieza | SIA433EDJ | |
Descripción | P-Channel MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SIA433EDJ (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! New Product
P-Channel 20-V (D-S) MOSFET
SiA433EDJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.018 at VGS = - 4.5 V
- 20 0.026 at VGS = - 2.5 V
0.065 at VGS = - 1.8 V
ID (A)
- 12a
- 12a
-4
Qg (Typ.)
20 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
PowerPAK SC-70-6L-Single
• 100 % Rg Tested
• Built in ESD Protection with Zener Diode
D
6
D
5
2.05 mm S
4
1
D
2
D
3
G
S
2.05 mm
• Typical ESD Performance: 1800 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Marking Code
• Portable Devices
- Load Switch
- Battery Switch
- Charger Switch
Part # code
BLX
XXX
Lot Traceability
G
R
S
and Date code
D
Ordering Information: SiA433EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 20
± 12
- 12a
- 12a
- 11.3b, c
- 9.1b, c
- 50
- 12a
- 2.9b, c
19
12
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
28
5.3
36
°C/W
6.5
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
Document Number: 65472
S09-2114-Rev. A, 12-Oct-09
www.vishay.com
1
Free Datasheet http://www.datasheet4u.com/
1 page New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 20
25
15
20
15
Package Limited
10
5
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
SiA433EDJ
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65472
S09-2114-Rev. A, 12-Oct-09
www.vishay.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet SIA433EDJ.PDF ] |
Número de pieza | Descripción | Fabricantes |
SIA433EDJ | P-Channel MOSFET | Vishay |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |