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Datasheet 2SC2411K Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SC2411K | Silicon NPN transistor 2SC2411K
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
集电极直流电流大,饱和压降低,与 2SA1036K 互补。 Large IC,low VCE(sat),complementary pair with the 2SA103 | BLUE ROCKET ELECTRONICS | transistor |
2 | 2SC2411K | Medium Power Transistor | ROHM Semiconductor | transistor |
3 | 2SC2411K | Medium Power Transistor SMD Type
Medium Power Transistor 2SC2411K
SOT-23
Transistors
Unit: mm
High ICMax. ICMax. = 0.5A
+0.1 2.4-0.1
Low VCE(sat). Optimal for low voltage operation. NPN silicon transistor
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
Features
+0.1 2.9-0.1 +0.1 0.4-0.1
3
+0.05 0.1-0.01
| Kexin | transistor |
4 | 2SC2411K | NPN General Purpose Transistors 2SC2411K
NPN General Purpose Transistors
P b Lead(Pb)-Free
1 2 3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature
Symbol
VCEO VCBO | Weitron | transistor |
5 | 2SC2411K | NPN GENERAL PURPOSE SWITCHING TRANSISTOR 2SC2411K
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE FEATURES
• NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • In compliance with EU RoHS 2002/95/EC directives
32 Volts
POWER
225mW
MECHANICAL DATA
Case : SOT-23 plastic Terminal | Pan Jit | transistor |
2SC Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SC0108T2Dx-xx | Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core 2SC0108T2Dx-xx Preliminary
2SC0108T2Dx-xx Description & Application Manual
Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core
Abstract
The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica CT-Concept transistor | | |
2 | 2SC0829 | Silicon NPN epitaxial planar type DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
• Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
0.7±0.1
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parame Panasonic Semiconductor transistor | | |
3 | 2SC0829 | Silicon NPN epitaxial planar type DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
• Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
0.7±0.1
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parame Panasonic Semiconductor transistor | | |
4 | 2SC100 | NPN Transistor w
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ETC transistor | | |
5 | 2SC1000 | (2SCxxx) Low Level and General Purpose Amplifiers w
w
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Micro Electronics transistor | | |
6 | 2SC1000 | Silicon NPN Epitaxial Transistor ETC transistor | | |
7 | 2SC1002 | Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1002
DESCRIPTION ·With TO-66 package ·High voltage ·High transition frequency APPLICATIONS ·For color TV video output applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and sym SavantIC transistor | |
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