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PDF AON6938 Data sheet ( Hoja de datos )

Número de pieza AON6938
Descripción N-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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No Preview Available ! AON6938 Hoja de datos, Descripción, Manual

AON6938
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
30A
<8.2m
<11.5m
Q2
30V
42A
<2.2m
<3.3m
Top View
DFN5X6
Bottom View
PIN1
Top View
BoBtotottmomViVeiwew
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
±20
Continuous Drain TC=25°C
CurrentG
TC=100°C
Pulsed Drain Current C
30 42
ID 23 33
IDM 117 168
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.05mH C
IDSM
IAS
EAS
17
13
35
31
33
26
60
90
VDS Spike
100ns
VSPIKE
36
TC=25°C
Power Dissipation B TC=100°C
31
PD 12.5
78
31
TA=25°C
Power Dissipation A TA=70°C
PDSM
3.6
2.3
4.3
2.7
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
56
3.3
Typ Q2
24
50
1.2
Max Q1
35
67
4
Max Q2
29
60
1.6
Units
°C/W
°C/W
°C/W
Rev 0 : Oct 2011
www.aosmd.com
Page 1 of 10
Free Datasheet http://www.datasheet4u.com/

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AON6938 pdf
AON6938
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
TA=150°C
TA=25°C
TA=100°C
TA=125°C
10.0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
35
30
25
20
15
10
5
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
40 10000
TA=25°C
30 1000
17
20 100 5
2
10
10 10
0
0 25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.00001 0.001
0.1
10 0 1000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=67°C/W
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0 : Oct 2011
www.aosmd.com
Page 5 of 10
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