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PDF 2SK3609-01 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3609-01 | |
| Descripción | N-CHANNEL SILICON POWER MOSFET | |
| Fabricantes | Fuji Electric | |
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2SK3609-01
FUJI POWER MOSFET
Super FAP-G Series
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
200 V
Continuous drain current
VDSX *5
ID Tc=25°C
170
±18
V
A
Ta=25°C
±2.7 **
A
Pulsed drain current
ID(puls]
±72 A
Gate-source voltage
VGS
±30 V
Non-repetitive Avalanche current IAS *2
18 A
Maximum Avalanche Energy
EAS *1
125.5
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Tc=25°C
Ta=25°C
5
105
2.4 **
kV/µs
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
*1 L=620µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch =<150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 200V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Foot Print Pattern
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source
S2 : Source
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V VDS=0V
ID=6.5A VGS=10V
Tch=25°C
Tch=125°C
ID=6.5A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=6.5A
VGS=10V
RGS=10 Ω
VCC=100V
ID=13A
VGS=10V
L=620µH Tch=25°C
IF=13A VGS=0V Tch=25°C
IF=13A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
200
3.0
5.5
18
Typ.
10
131
11
770
110
5
12
2.6
22
6.1
21
8
5
1.10
0.15
0.88
Max. Units
V
5.0 V
25 µA
250
100 nA
170 mΩ
S
1155
pF
165
7.5
18 ns
3.9
33
9.2
31.5 nC
12
7.5
A
1.65 V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Rth(ch-a) **
Test Conditions
channel to case
channel to ambient
channel to ambient
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
www.fujielectric.co.jp/denshi/scd
Min. Typ.
Max. Units
1.191 °C/W
87.0 °C/W
52.0 °C/W
1
Free Datasheet http://www.datasheet4u.com/
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| PDF Descargar | [ Datasheet 2SK3609-01.PDF ] | |
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