|
|
Datasheet 2N4900 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N4900 | Silicon PNP Power Transistors Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N4898 2N4899 2N4900
DESCRIPTION With TO-66 package
Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912
APPLICATIONS Designed for driver circuits,switching
and amplifier applicat | Inchange Semiconductor | transistor |
2 | 2N4900 | POWER TRANSISTORS(1A/ 25W) A
A
A
A
| Mospec Semiconductor | transistor |
3 | 2N4900 | Trans GP BJT PNP 80V 1A 3-Pin(2+Tab) TO-66 | New Jersey Semiconductor | data |
4 | 2N4900X | PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR 2N4898X 2N4899X 2N4900X
MECHANICAL DATA Dimensions in mm (inches)
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 3.86 (0.145) rad.
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR
APPLICATIONS
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
14.48 (0.570) 14.99 (0.590)
4.83 (0.1 | Seme LAB | transistor |
2N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N40 | N-CHANNEL POWER MOSFET 2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching perfo Unisonic Technologies mosfet | | |
2 | 2N4000 | NPN Transistor OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datashee Texas transistor | | |
3 | 2N4000 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I Seme LAB data | | |
4 | 2N4000 | Trans GP BJT NPN 80V 1A 3-Pin TO-5 New Jersey Semiconductor data | | |
5 | 2N4001 | NPN Transistor OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datashee Texas transistor | | |
6 | 2N4001 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 100V
5.08 (0.200) typ.
Seme LAB data | | |
7 | 2N4001 | Trans GP BJT NPN 100V 1A 3-Pin TO-5 New Jersey Semiconductor data | |
Esta página es del resultado de búsqueda del 2N4900. Si pulsa el resultado de búsqueda de 2N4900 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |