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Datasheet 1N6095R Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N6095R | Silicon Power Schottky Diode Silicon Power Schottky Diode
Features • High Surge Capability • Types from 30 V to 40V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N6095 thru 1N6096R
VRRM = 30 V - 40 V IF = 25 A
DO-4 Package
Maximum ratings, |  GeneSiC | diode |
| 2 | 1N6095R | Schottky Power Diode Naina Semiconductor Ltd.
Schottky Power Diode, 25A
Features
• • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity
1N6095 thru 1N6096R
DO-203AA (DO-4)
Maximum Ratings (TJ = 25oC, unless otherwise noted) Paramet |  Naina Semiconductor | diode |
| 3 | 1N6095R | Silicon Power Schottky Diode Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
|  America Semiconductor | diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | |
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