|
|
PDF AUIRFR2407 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFR2407 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AUIRFR2407 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
Features
l Advanced Planar Technology
l Low On-Resistance
● Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUTOMOTIVE GRADE
PD - 97689A
AUIRFR2407
HEXFET® Power MOSFET
D V(BR)DSS
75V
RDS(on) typ.
21.8mΩ
G
max
26mΩ
S ID (Silicon Limited)
42A
D
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
Gate
S
G
D-Pak
AUIRFR2407
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
cIDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Max.
42
29
170
110
0.71
± 20
130
25
11
5.0
-55 to + 175
300
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/30/11
Free Datasheet http://www.Datasheet4U.com
1 page  
AUIRFR2407
www.irf.com
5
Free Datasheet http://www.Datasheet4U.com
5 Page 
AUIRFR2407
Ordering Information
Base part
number
AUIRFR2407
Package Type Standard Pack
Dpak
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
75
2000
3000
3000
AUIRFR2407
AUIRFR2407TR
AUIRFR2407TRL
AUIRFR2407TRR
www.irf.com
11
Free Datasheet http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRFR2407.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AUIRFR2405 | Power MOSFET ( Transistor ) | International Rectifier |
| AUIRFR2407 | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |