Datasheet 16N60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	16N60	N-Channel Power MOSFET, Transistor SEMICONDUCTOR 16N60 Series RoHS RoHS Nell High Power Products N-Channel Power MOSFET (16A, 600Volts) DESCRIPTION The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max.	nELL	mosfet
2	16N60	IXSA16N60 Preliminary Data Sheet Low VCE(sat) IGBT Short Circuit SOA Capability IXSA 16N60 IXSP 16N60 V CES = 600V I C25 = 16A VCE(sat)typ = 1.8V Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1	IXYS	data
3	16N60	FCP16N60 FCP16N60 / FCPF16N60 600V N-Channel MOSFET December 2008 FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. Rds(on) = 0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche tested SuperFET Descr	Fairchild Semiconductor	data

16N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	16N03L	RFD16N03L S E M I C O N D U C T O R RFD16N03L, RFD16N03LSM 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) December 1995 Features • 16A, 30V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Can be	Fairchild Semiconductor	data
2	16N05	RFD16N05 RFD16N05, RFD16N05SM Data Sheet November 2003 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization o	Fairchild Semiconductor	data
3	16N15	FQP16N15 QFET % % % % % % % &' ()&+,-.+ &'Ω/,.&+, 0 1 23 4 01 3+4 &++5 ! 6 !!$ " &7° 8 9	Fairchild Semiconductor	data
4	16N25	FQP16N25 FQP16N25 — N-Channel QFET® MOSFET FQP16N25 N-Channel QFET® MOSFET 250 V, 16 A, 230 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailor	Fairchild Semiconductor	data
5	16N25E	MTB16N25E MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package whi	Motorola Semiconductors	data
6	16N50	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-	Unisonic Technologies	mosfet
7	16N50C	SIHF16N50C www.DataSheet.co.kr SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration TO-220AB TO-220 FULLPAK FEATURES 560 V VGS = 10 V 68 17.6 21.8 Single D • Low Figure-of-Merit Ron x Qg 0.38 • 1	Vishay Siliconix	data

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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