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PDF SI7454CDP Data sheet ( Hoja de datos )
| Número de pieza | SI7454CDP | |
| Descripción | N-Channel 100 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 100 V (D-S) MOSFET
Si7454CDP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
100
RDS(on) ()
0.0305 at VGS = 10 V
0.033 at VGS = 7.5 V
0.043 at VGS = 4.5 V
PowerPAK® SO-8
ID (A)a
22
21
18.5
Qg (Typ.)
9.5 nC
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Primary Side Switch
• Telecom/Server 48 V, Full/Half-Bridge dc-to-dc
• Industrial
D
G
Bottom View
Ordering Information: Si7454CDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L =0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
100
± 20
22
17.6
8.1b, c
6.5b, c
40
22
3.7b, c
15
11.2
29.7
19
4.1b, c
2.6b, c
- 55 to 150
260
S
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
24
3.3
30 °C/W
4.2
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 65940
www.vishay.com
S10-0784-Rev. A, 05-Apr-10
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.Datasheet4U.com
1 page  
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
Si7454CDP
Vishay Siliconix
20
15
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
40 2.20
32 1.76
24 1.32
16 0.88
8 0.44
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.00
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65940
www.vishay.com
S10-0784-Rev. A, 05-Apr-10
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
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