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Número de pieza | CMP80N06 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Cmos | |
Logotipo | ||
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No Preview Available ! CMP80N06/CMB80N06/CMI80N06
N-Channel Enhancement Mode Field Effect Transistor
General Description
Product Summery
The 80N06 is N-ch MOSFET
with extreme high cell density ,
which provide excellent RDSON
and gate charge for most of the
synchronous buck converter
applications.
Features
Simple Drive Requirement
Fast Switching
Low On-Resistance
Absolute Maximum Ratings
BVDSS
60V
RDSON
7.8m
ID
80A
Applications
Motor Control
DC-DC converters
General Purpose Power Amplifier
TO220/263/262 Pin Configuration
G
DS
TO-220
(CMP80N06)
GD
S
TO-263
(CMB80N06)
G DS
TO-262
(CMI80N06)
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current1
Continuous Drain Current1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Value
60
20
80
50
250
405
80
260
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-case
Value
62
0.9
Unit
/W
/W
1
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Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet CMP80N06.PDF ] |
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