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Número de pieza | MTNN18N03Q8 | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTNN18N03Q8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C806Q8
Issued Date : 2009.12.30
Revised Date : 2011.03.21
Page No. : 1/9
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTNN18N03Q8
N-CH 1
BVDSS
30V
ID 10A
RDSON(MAX) 18mΩ
N-CH 2
60V
0.115A
5Ω
Description
The MTNN18N03Q8 provides the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Two N-ch MOSFETs in a package
• Pb-free lead plating package
Equivalent Circuit
MTNN18N03Q8
Outline
SOP-8
G:Gate
S:Source
D:Drain
MTNN18N03Q8
CYStek Product Specification
http://www.Datasheet4U.com
1 page N-CH MOSFET 2
CYStech Electronics Corp.
Spec. No. : C806Q8
Issued Date : 2009.12.30
Revised Date : 2011.03.21
Page No. : 5/9
Typical Output Characteristics
0.3
0.25 6V
4V
3.5V
0.2
0.15 3V
0.1
0.05
0
01
VGS=2.2V
234
Drain-Source Voltage -VDS(V)
Typical Transfer Characteristics
0.3
0.25 VDS=10V
0.2
0.15
0.1
0.05
0
012
34
Gate-Source Voltage-VGS(V)
Static Drain-Source On-State resistance vs Drain Current
10
VGS=5V
Static Drain-Source On-State resistance vs Drain Current
10
1
0.01
0.1
Drain Current-ID(A)
VGS=10V
1
1 0.01
0.1
Drain Current-ID(A)
1
MTNN18N03Q8
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTNN18N03Q8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTNN18N03Q8 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | CYStech Electronics |
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